| PART |
Description |
Maker |
| RFP8P08 RFP8P10 RFM8P10 RFM8P08 |
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
|
HARRIS[Harris Corporation]
|
| RFP2P08 RFP2P10 |
-2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs
-2A -80V and -100V 3.500 Ohm P-Channel Power MOSFETs
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| CDSUR4448-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=80V, P-D=200mW, I-F=125mA
|
Comchip Technology
|
| CDSUR4448 |
Small Signal Switching Diodes, V-RRM=100V, V-R=80V, P-D=200mW, I-F=125mA
|
Comchip Technology
|
| RFP2N10L |
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| IRFD9113 IRFD9110 |
(IRFD9110) P Channel Power MOSFET
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
|
Harris Corporation
|
| IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范，以.1A的，80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation]
Harris Semiconductor
Harris, Corp.
|
| CDBHM2100L-G CDBHM220L-G CDBHM240L-G CDBHM280L-G C |
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=2A
Bridge Rectifiers, V-RRM=20V, V-DC=20V, I-(AV)=2A
Bridge Rectifiers, V-RRM=40V, V-DC=40V, I-(AV)=2A
Bridge Rectifiers, V-RRM=80V, V-DC=80V, I-(AV)=2A
Bridge Rectifiers, V-RRM=90V, V-DC=90V, I-(AV)=2A
Bridge Rectifiers, V-RRM=60V, V-DC=60V, I-(AV)=2A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=2A
Bridge Rectifiers, V-RRM=30V, V-DC=30V, I-(AV)=2A
|
Comchip Technology
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| SR2080CT-G |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=80V, V<sub>R</sub>=80V, I<sub>O</sub>=20A
|
Comchip Technology
|
| CDSV3-202N-G CDSV3-202P-G CDSV3-202N-G12 |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
Small Signal Switching Diodes
|
Comchip Technology
|
| IRF530 IRF532FI IRF531FI IRF533FI IRF531 IRF530FI |
N-channel MOSFET, 80V, 9A
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
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